l/ ^ssmi-conauatoi zpwaucti, one. 20 stern ave. springfield, new jersey 07081 u.sa npn - mpsa05, MPSA06*; pnp - mpsa55, mpsa56* ?preferred devices amplifier transistors voltage and current are negative for pnp transistors telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 maximum ratings npn collector 3 pnp collector rating collector -emitter voltage mpsa05, mpsa55 MPSA06, mpsa56 collector -base voltage mpsa05, mpsa55 MPSA06, mpsa56 emitter -base voltage collector current - continuous total device dissipation @ ta = 25c derate above 25c total device dissipation @ tc = 25c derate above 25c operating and storage junction temperature range symbol vceo vcbo vebo ic pd pd tj. tstg value 60 80 60 80 4.0 500 625 5.0 1.5 12 -55 to +150 unit vdc vdc vdc madc w mw/c w mw/c c thermal characteristics characteristic thermal resistance, junction-to-ambient (note 1) thermal resistance, junction-to-case symbol rsja rojc max 200 83.3 unit c/w c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. roja is measured with the device soldered into a typical printed circuit board. emitter emitter to-92 straight lead bulk pack nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors entourages customers to verify that datasheets are current before placing orders. oiinlifv s*?mi-f nnrln*-*nr<
npn - mpsa05, MPSA06*; pnp - mpsa55, mpsa56* electrical characteristics (ta = 25c unless otherwise noted) characteristic symbol min max unit off characteristics collector- emitter breakdown voltage (note 2) (lc= 1.0 madc, ib = 0) mpsa05, mpsa55 MPSA06, mpsa56 emitter- base breakdown voltage (ie = 100|iadc, lc = 0) collector cutoff current (vce = 60 vdc, ib = 0) collector cutoff current (vcb = 60 vdc, ie = 0) mpsa05, mpsa55 (vcb = 80 vdc, ie = 0) MPSA06, mpsa56 v(br)ceo v(br)ebo ices icbo 60 80 4.0 ~ _ _ - 0.1 0.1 0.1 vdc vdc nadc nadc on characteristics dc current gain (lc= 10madc, vce = 1-0 vdc) (lc = 100 madc, vce = 1.0 vdc) collector- emitter saturation voltage (lc= 100 madc, ib = 10 madc) base-emitter on voltage (lc = 100 madc, vce = 1 .0 vdc) hfe vce(sat) vbe(on) 100 100 - - _ 0.25 1.2 vdc vdc small-signal characteristics current-gain - bandwidth product (note 3) ft (lc = 10 ma, vce = 2.0 v, f = 100 mhz) mpsa05 MPSA06 (lc = 1 00 madc, vce = 1 -0 vdc, f = 1 00 mhz) mpsa55 mpsa56 2. pulse test: pulse width <; 3. fj is defined as the frequen -1. i *? 5.0 us ?? < vin n m. \( 0 ? |^ t-3'0ns 5.0 ,if < mhz 100 50 300 us, duty cycle < 2%. ;y at which |hfe| extrapolates to unity. turn-on time turn-off time dv vcc +vbb vcc > +40v 0 +40v i 100 > rl ^ 100 s rl } j o output " ^3 j 0 output .^ /^k\ v|n tf .?* /^pn ! ^^ ( l ) _l * 'f vtv ^r*cs<6-opf i. i >- > :10 ,. j f _l ^s.o^sf- _|_ tr = 3.0 ns v v v 1 1 1 \hv/ ^'cs <6.0pf 100 *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all voltage polarities figure 1. switching time test circuits
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